All Transistors. BUL310 Datasheet

 

BUL310 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUL310
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 75 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 500 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO220

 BUL310 Transistor Equivalent Substitute - Cross-Reference Search

   

BUL310 Datasheet (PDF)

 ..1. Size:204K  st
bul310.pdf

BUL310 BUL310

BUL310HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC32 LARGE RBSOA1APPLICATIONS TO-220 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING F

 ..2. Size:119K  inchange semiconductor
bul310.pdf

BUL310 BUL310

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL310 DESCRIPTION With TO-220C package High voltage,high speed Wide area of safe operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies Flyback and forward single transistor low power converters PINNING PIN DESCRIPTION1 Base Collector;con

 0.1. Size:72K  st
bul310fp.pdf

BUL310 BUL310

BUL310FPHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC LARGE RBSOA32 FULLY MOLDED ISOLATED PACKAGE1 2000 V DC ISOLATION (U.L. COMPLIANT)TO-220FPAPPLICATI

 0.2. Size:213K  inchange semiconductor
bul310xi.pdf

BUL310 BUL310

isc Silicon NPN Power Transistor BUL310XIDESCRIPTIONCollectorEmitter Sustaining Voltage: V = 500V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 0.5V(Max) @ I = 1ACE(sat) C High Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in lighting applications and

 0.3. Size:116K  inchange semiconductor
bul310fp.pdf

BUL310 BUL310

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL310FP DESCRIPTION With TO-220F package High voltage,high speed Wide area of safe operation APPLICATIONS Electronic ballasts for fluorescent lighting Switch mode power supplies Flyback and forward single transistor low power converters PINNING PIN DESCRIPTION1 Base Collector;c

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BUL56BSMD | KTC3730V | 2SC45

 

 
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