All Transistors. BUL53B Datasheet

 

BUL53B Datasheet and Replacement


   Type Designator: BUL53B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 45 W
   Maximum Collector-Base Voltage |Vcb|: 550 V
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO220
 

 BUL53B Substitution

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BUL53B Datasheet (PDF)

 0.1. Size:28K  semelab
 bul53b-sm.pdf pdf_icon

BUL53B

BUL53BSMSEMELABADVANCED DISTRIBUTEDMECHANICAL DATABASE DESIGNHIGH VOLTAGE, HIGH SPEED NPNSILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURE11.52.0 RANGE0.253.5 3.5 3.0 SCREENING OPTIONS FOR MILITARY ANDSPACE APPLICATIONS SEMEFAB DESIGNED AND DIFFUSED DIE1 3 HIGH VOLTAGE (VCBO = 800V) FAST SWITCHING (tf

 0.2. Size:20K  semelab
 bul53bsmd.pdf pdf_icon

BUL53B

BUL53BSMDADVANCED DISTRIBUTEDMECHANICAL DATABASE DESIGNDimensions in mmHIGH VOLTAGE, HIGH SPEED NPNSILICON POWER TRANSISTOR CERAMIC SURFACE MOUNT PACKAGE FULL MIL/AEROSPACE TEMPERATURERANGE SCREENING OPTIONS FOR MILITARY ANDSPACE APPLICATIONS SEMEFAB DESIGNED

 9.1. Size:10K  semelab
 bul53asmd.pdf pdf_icon

BUL53B

BUL53ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 300V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

Datasheet: BUL510 , BUL51A , BUL51B , BUL52A , BUL52AFI , BUL52B , BUL52BFI , BUL53A , A1266 , BUL54A , BUL54AFI , BUL54B , BUL54BFI , BUL55A , BUL55B , BUL56A , BUL56B .

History: GI3638

Keywords - BUL53B transistor datasheet

 BUL53B cross reference
 BUL53B equivalent finder
 BUL53B lookup
 BUL53B substitution
 BUL53B replacement

 

 
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