BUL55A Specs and Replacement
Type Designator: BUL55A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
BUL55A Substitution
BUL55A detailed specifications
bul55asmd.pdf
BUL55ASMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 300V IC = 7A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (... See More ⇒
bul55bsmd.pdf
BUL55BSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 250V IC = 8A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (... See More ⇒
bul5555.pdf
BUL5555(BR3DD5555R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , Fast speed switching, Wide SOA. / Applications High voltage switch mode,suitable for electro... See More ⇒
Detailed specifications: BUL52B , BUL52BFI , BUL53A , BUL53B , BUL54A , BUL54AFI , BUL54B , BUL54BFI , S9018 , BUL55B , BUL56A , BUL56B , BUL57 , BUL57A , BUL57PI , BUL58A , BUL58B .
Keywords - BUL55A transistor specs
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