All Transistors. BUL58A Datasheet

 

BUL58A Datasheet and Replacement


   Type Designator: BUL58A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 350 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO220
 

 BUL58A Substitution

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BUL58A Datasheet (PDF)

 0.1. Size:10K  semelab
 bul58asmd.pdf pdf_icon

BUL58A

BUL58ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 160V IC = 10A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26

 9.1. Size:213K  st
 bul58d.pdf pdf_icon

BUL58A

BUL58DHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS 3 VERY HIGH SWITCHING SPEED 2 FULLY CHARACTERISED AT 125oC 1 HIGH RUGGEDNESS INTEGRATED ANTIPARALLELTO-220COL

 9.2. Size:22K  semelab
 bul58bsmd.pdf pdf_icon

BUL58A

BUL58BSMDADVANCEDMECHANICAL DATADISTRIBUTED BASE DESIGNDimensions in mmHIGH VOLTAGEHIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGEFAST SWITCHINGHIGH ENERGY RATING FEATURES Multibase for efficient energy distributiona

Datasheet: BUL54BFI , BUL55A , BUL55B , BUL56A , BUL56B , BUL57 , BUL57A , BUL57PI , 2N2907 , BUL58B , BUL58D , BUL59A , BUL67 , BUL74A , BUL74B , BUL76A , BUL76B .

History: KSH13009A

Keywords - BUL58A transistor datasheet

 BUL58A cross reference
 BUL58A equivalent finder
 BUL58A lookup
 BUL58A substitution
 BUL58A replacement

 

 
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