BUL59A Datasheet, Equivalent, Cross Reference Search
Type Designator: BUL59A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO220
BUL59A Transistor Equivalent Substitute - Cross-Reference Search
BUL59A Datasheet (PDF)
bul59.pdf
BUL59 HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESSAPPLICATIONS ELECTRONIC TRANSFORMERS FOR32HALOGEN LAMPS1 SWITCH MODE POWER SUPPLIESTO-220DESCRIPTIONThe BUL59 is manufactured using high voltageMulti Epitaxial Mesa technol
bul59.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL59 DESCRIPTIONCollectorEmitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 2A High Speed Switching APPLICATIONSDesigned for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: LP1001A