BUL59A Specs and Replacement
Type Designator: BUL59A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO220
BUL59A Substitution
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BUL59A datasheet
BUL59 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN TRANSISTOR HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS APPLICATIONS ELECTRONIC TRANSFORMERS FOR 3 2 HALOGEN LAMPS 1 SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The BUL59 is manufactured using high voltage Multi Epitaxial Mesa technol... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL59 DESCRIPTION Collector Emitter Sustaining Voltage VCEO(SUS) = 400V(Min.) Collector Saturation Voltage VCE(sat) = 0.5V(Max) @ IC= 2A High Speed Switching APPLICATIONS Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMUM RATINGS(... See More ⇒
Detailed specifications: BUL56A, BUL56B, BUL57, BUL57A, BUL57PI, BUL58A, BUL58B, BUL58D, BDT88, BUL67, BUL74A, BUL74B, BUL76A, BUL76B, BUL810, BUL87, BUL98B
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