BUP51 Specs and Replacement
Type Designator: BUP51
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 175 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 80 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
BUP51 Substitution
- BJT ⓘ Cross-Reference Search
BUP51 datasheet
isc Silicon NPN Power Transistor BUP51 DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor For audio amplifier applications ABSOLUTE MAXIMUM RATINGS(... See More ⇒
Detailed specifications: BUP43, BUP44, BUP45, BUP46, BUP47, BUP48, BUP49, BUP50, TIP127, BUP52, BUP53, BUP54, BUP56, BUP57, BUP58, BUP59, BUPD1520
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