BUP51 Datasheet and Replacement
Type Designator: BUP51
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 300 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 175 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 80 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BUP51 Substitution
BUP51 Datasheet (PDF)
bup51.pdf

isc Silicon NPN Power Transistor BUP51DESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorFor audio amplifier applicationsABSOLUTE MAXIMUM RATINGS(
Datasheet: BUP43 , BUP44 , BUP45 , BUP46 , BUP47 , BUP48 , BUP49 , BUP50 , 2SC945 , BUP52 , BUP53 , BUP54 , BUP56 , BUP57 , BUP58 , BUP59 , BUPD1520 .
Keywords - BUP51 transistor datasheet
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History: ST11 | 2SC5176



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