BUR10 Specs and Replacement
Type Designator: BUR10
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO66
BUR10 Substitution
- BJT ⓘ Cross-Reference Search
BUR10 datasheet
NO PDF data!
Detailed specifications: BUP52, BUP53, BUP54, BUP56, BUP57, BUP58, BUP59, BUPD1520, 2SC945, BUR11, BUR12, BUR13, BUR14, BUR15, BUR20, BUR21, BUR22
Keywords - BUR10 pdf specs
BUR10 cross reference
BUR10 equivalent finder
BUR10 pdf lookup
BUR10 substitution
BUR10 replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
2sk170 datasheet | 2n7000 equivalent | tip31 | tip122 transistor | 2sc1079 | 2sc1815 equivalent | 2sa1220 | 2sa940
