All Transistors. BUR21 Datasheet

 

BUR21 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUR21
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 40 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: TO3

 BUR21 Transistor Equivalent Substitute - Cross-Reference Search

   

BUR21 Datasheet (PDF)

 ..1. Size:208K  inchange semiconductor
 bur21.pdf

BUR21 BUR21

isc Silicon NPN Power Transistor BUR21DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V (Max.) @I = 25ACE(sat) CHigh Switching SpeedHigh DC Current Gain-: h = 10(Min.) @I = 25AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high power applications.ABSOLUTE MAXIMUM RAT

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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