BUR807 Specs and Replacement
Type Designator: BUR807
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 330 V
Maximum Collector-Emitter Voltage |Vce|: 330 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO3
BUR807 Substitution
- BJT ⓘ Cross-Reference Search
BUR807 datasheet
NO PDF data!
Detailed specifications: BUR606D, BUR607, BUR607D, BUR608, BUR608D, BUR61, BUR62, BUR806, B647, BUS11, BUS11-4, BUS11-6, BUS11A, BUS11B, BUS12, BUS12-4, BUS12-6
Keywords - BUR807 pdf specs
BUR807 cross reference
BUR807 equivalent finder
BUR807 pdf lookup
BUR807 substitution
BUR807 replacement
