All Transistors. BUS131H Datasheet

 

BUS131H Datasheet and Replacement


   Type Designator: BUS131H
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 7
   Noise Figure, dB: -
   Package: TO3
 

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BUS131H Datasheet (PDF)

 8.1. Size:117K  inchange semiconductor
 bus131 a.pdf pdf_icon

BUS131H

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUS131/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUS131 500V (Min)-BUS131A APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNITBUS

 9.1. Size:130K  inchange semiconductor
 bus13a.pdf pdf_icon

BUS131H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUS13A DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Converters Inverters Switching regulators Motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL

 9.2. Size:117K  inchange semiconductor
 bus13.pdf pdf_icon

BUS131H

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUS13 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Converters Inverters Switching regulators Motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute maximum ratings(Ta=) SYMBOL P

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N3800DCSM | 2SD402 | BDX61-7 | KSP55 | 2N594

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