BUT131 Specs and Replacement

Type Designator: BUT131

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 850 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO220

 BUT131 Substitution

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BUT131 datasheet

 ..1. Size:147K  inchange semiconductor

 but131 a.pdf pdf_icon

BUT131

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUT131/A DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 450V(Min)- BUT131 500V(Min)- BUT131A High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAME... See More ⇒

 0.1. Size:138K  inchange semiconductor

 but131h.pdf pdf_icon

BUT131

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT131H DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector-... See More ⇒

Detailed specifications: BUT11AX, BUT11F, BUT12, BUT12A, BUT12AF, BUT12AFI, BUT12F, BUT13, 2SD669, BUT131A, BUT131H, BUT13P, BUT13PFI, BUT14, BUT15, BUT16, BUT18

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