BUT131 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUT131
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 850 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO220
BUT131 Transistor Equivalent Substitute - Cross-Reference Search
BUT131 Datasheet (PDF)
but131 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUT131/A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min)- BUT131 500V(Min)- BUT131A High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME
but131h.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT131H DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector-
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
