All Transistors. BUT131H Datasheet

 

BUT131H Datasheet and Replacement


   Type Designator: BUT131H
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 850 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO220
 

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BUT131H Datasheet (PDF)

 ..1. Size:138K  inchange semiconductor
 but131h.pdf pdf_icon

BUT131H

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT131H DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector-

 8.1. Size:147K  inchange semiconductor
 but131 a.pdf pdf_icon

BUT131H

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUT131/A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min)- BUT131 500V(Min)- BUT131A High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME

Datasheet: BUT12 , BUT12A , BUT12AF , BUT12AFI , BUT12F , BUT13 , BUT131 , BUT131A , D667 , BUT13P , BUT13PFI , BUT14 , BUT15 , BUT16 , BUT18 , BUT18A , BUT18AF .

History: 2N2763 | BFN17 | BUR31

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