All Transistors. BUT21A Datasheet

 

BUT21A Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUT21A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 350 V
   Maximum Emitter-Base Voltage |Veb|: 1.5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO220

 BUT21A Transistor Equivalent Substitute - Cross-Reference Search

   

BUT21A Datasheet (PDF)

 9.1. Size:57K  philips
but211x 1.pdf

BUT21A
BUT21A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211X GENERAL DESCRIPTIONEnhanced performance, new generation, high speed switching npn transistor in a plastic full-pack envelopespecially suited for high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage

 9.2. Size:54K  philips
but211 1.pdf

BUT21A
BUT21A

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT211 GENERAL DESCRIPTIONEnhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suitedfor high frequency electronic lighting ballast applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE

 9.3. Size:241K  inchange semiconductor
but211.pdf

BUT21A
BUT21A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT211 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) High Speed Switching APPLICATIONS Designed for high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 850 V V

 9.4. Size:232K  inchange semiconductor
but211x.pdf

BUT21A
BUT21A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT211X DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) High Speed Switching APPLICATIONS Designed for high frequency electronic lighting ballast applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 850 V

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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