BUT36 Datasheet and Replacement

   Type Designator: BUT36
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 1400 V
   Maximum Collector-Emitter Voltage |Vce|: 1000 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 24 A
   Max. Operating Junction Temperature (Tj): 115 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
     - BJT ⓘ Cross-Reference Search