All Transistors. BUT56T Datasheet

 

BUT56T Datasheet and Replacement


   Type Designator: BUT56T
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 1000 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TOP3
 

 BUT56T Substitution

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BUT56T Datasheet (PDF)

 9.1. Size:119K  inchange semiconductor
 but56 but56a.pdf pdf_icon

BUT56T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A DESCRIPTION With TO-220C package High voltage;high speed High power dissipation APPLICATIONS Switching mode power supply PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolut maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

 9.2. Size:214K  inchange semiconductor
 but56af.pdf pdf_icon

BUT56T

isc Silicon NPN Power Transistor BUT56AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed SwitchingHigh Power DissipationWith TO-220Fa Package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching mode power supply applications.ABSOLUTE MAXIM

Datasheet: BUT46A , BUT50P , BUT51P , BUT54 , BUT55 , BUT56 , BUT56A , BUT56A-668 , A1941 , BUT57 , BUT57I , BUT60 , BUT62 , BUT70 , BUT70I , BUT71 , BUT71I .

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