BUT56T Specs and Replacement

Type Designator: BUT56T

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TOP3

 BUT56T Substitution

- BJT ⓘ Cross-Reference Search

 

BUT56T datasheet

 9.1. Size:119K  inchange semiconductor

 but56 but56a.pdf pdf_icon

BUT56T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUT56 BUT56A DESCRIPTION With TO-220C package High voltage;high speed High power dissipation APPLICATIONS Switching mode power supply PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolut maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE... See More ⇒

 9.2. Size:214K  inchange semiconductor

 but56af.pdf pdf_icon

BUT56T

isc Silicon NPN Power Transistor BUT56AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) High Speed Switching High Power Dissipation With TO-220Fa Package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching mode power supply applications. ABSOLUTE MAXIM... See More ⇒

Detailed specifications: BUT46A, BUT50P, BUT51P, BUT54, BUT55, BUT56, BUT56A, BUT56A-668, D882, BUT57, BUT57I, BUT60, BUT62, BUT70, BUT70I, BUT71, BUT71I

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