BUT90 Specs and Replacement

Type Designator: BUT90

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 125 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

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BUT90 datasheet

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BUT90

BUT90 HIGH POWER NPN SILICON TRANSISTOR NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED HIGH RUGGEDNESS LOW COLLECTOR EMITTER SATURATION APPLICATIONS UNINTERRUPTABLE POWER SUPPLY 1 MOTOR CONTROL 2 LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT TO-3 DESCRIPTION (version "S") The BUT90 is a Multiepitaxial Planar NPN Transistor in TO-3 package. It is ... See More ⇒

Detailed specifications: BUT70, BUT70I, BUT71, BUT71I, BUT72, BUT72I, BUT76, BUT76A, BC327, BUT91, BUT92, BUT92A, BUT93, BUV10N, BUV11, BUV11CECC, BUV11N

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