BUV11 Specs and Replacement

Type Designator: BUV11

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 200 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

 BUV11 Substitution

- BJT ⓘ Cross-Reference Search

 

BUV11 datasheet

 ..1. Size:77K  inchange semiconductor

 buv11.pdf pdf_icon

BUV11

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV11 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 0.6V (Max.) @IC= 6A High Switching Speed High DC Current Gain- hFE= 20(Min.) @IC= 6A APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER V... See More ⇒

 0.1. Size:138K  motorola

 buv11rev.pdf pdf_icon

BUV11

Order this document MOTOROLA by BUV11/D SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series 20 AMPERES NPN Silicon Power Transistor NPN SILICON POWER . . . designed for high current, high speed, high power applications. METAL TRANSISTOR High DC current gain; hFE min. = 20 at IC = 6 A 200 VOLTS Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A 150 WATTS Very fast switc... See More ⇒

Detailed specifications: BUT76, BUT76A, BUT90, BUT91, BUT92, BUT92A, BUT93, BUV10N, BD335, BUV11CECC, BUV11N, BUV12, BUV18, BUV18X, BUV19, BUV1O, BUV20

Keywords - BUV11 pdf specs

 BUV11 cross reference

 BUV11 equivalent finder

 BUV11 pdf lookup

 BUV11 substitution

 BUV11 replacement