BUV11 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUV11
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
BUV11 Transistor Equivalent Substitute - Cross-Reference Search
BUV11 Datasheet (PDF)
buv11.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV11 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.) @IC= 6A High Switching Speed High DC Current Gain- : hFE= 20(Min.) @IC= 6A APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER V
buv11rev.pdf
Order this documentMOTOROLAby BUV11/DSEMICONDUCTOR TECHNICAL DATABUV11SWITCHMODE Series20 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high current, high speed, high power applications.METAL TRANSISTOR High DC current gain; hFE min. = 20 at IC = 6 A200 VOLTS Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A150 WATTS Very fast switc
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
