All Transistors. BUV11 Datasheet

 

BUV11 Datasheet and Replacement


   Type Designator: BUV11
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

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BUV11 Datasheet (PDF)

 ..1. Size:77K  inchange semiconductor
 buv11.pdf pdf_icon

BUV11

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV11 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.) @IC= 6A High Switching Speed High DC Current Gain- : hFE= 20(Min.) @IC= 6A APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER V

 0.1. Size:138K  motorola
 buv11rev.pdf pdf_icon

BUV11

Order this documentMOTOROLAby BUV11/DSEMICONDUCTOR TECHNICAL DATABUV11SWITCHMODE Series20 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high current, high speed, high power applications.METAL TRANSISTOR High DC current gain; hFE min. = 20 at IC = 6 A200 VOLTS Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A150 WATTS Very fast switc

Datasheet: BUT76 , BUT76A , BUT90 , BUT91 , BUT92 , BUT92A , BUT93 , BUV10N , TIP35C , BUV11CECC , BUV11N , BUV12 , BUV18 , BUV18X , BUV19 , BUV1O , BUV20 .

History: KSC3076O | 3DD13002F

Keywords - BUV11 transistor datasheet

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