BUV11N Specs and Replacement

Type Designator: BUV11N

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 220 V

Maximum Collector-Emitter Voltage |Vce|: 16 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

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BUV11N datasheet

 9.1. Size:138K  motorola

 buv11rev.pdf pdf_icon

BUV11N

Order this document MOTOROLA by BUV11/D SEMICONDUCTOR TECHNICAL DATA BUV11 SWITCHMODE Series 20 AMPERES NPN Silicon Power Transistor NPN SILICON POWER . . . designed for high current, high speed, high power applications. METAL TRANSISTOR High DC current gain; hFE min. = 20 at IC = 6 A 200 VOLTS Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A 150 WATTS Very fast switc... See More ⇒

 9.2. Size:77K  inchange semiconductor

 buv11.pdf pdf_icon

BUV11N

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV11 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 0.6V (Max.) @IC= 6A High Switching Speed High DC Current Gain- hFE= 20(Min.) @IC= 6A APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER V... See More ⇒

Detailed specifications: BUT90, BUT91, BUT92, BUT92A, BUT93, BUV10N, BUV11, BUV11CECC, B772, BUV12, BUV18, BUV18X, BUV19, BUV1O, BUV20, BUV21, BUV21N

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