All Transistors. BUV11N Datasheet

 

BUV11N Datasheet and Replacement


   Type Designator: BUV11N
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 220 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3
 

 BUV11N Substitution

   - BJT ⓘ Cross-Reference Search

   

BUV11N Datasheet (PDF)

 9.1. Size:138K  motorola
 buv11rev.pdf pdf_icon

BUV11N

Order this documentMOTOROLAby BUV11/DSEMICONDUCTOR TECHNICAL DATABUV11SWITCHMODE Series20 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high current, high speed, high power applications.METAL TRANSISTOR High DC current gain; hFE min. = 20 at IC = 6 A200 VOLTS Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 6 A150 WATTS Very fast switc

 9.2. Size:77K  inchange semiconductor
 buv11.pdf pdf_icon

BUV11N

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV11 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.6V (Max.) @IC= 6A High Switching Speed High DC Current Gain- : hFE= 20(Min.) @IC= 6A APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N6260 | BUX50C | 2N6275A | 2SC3217 | 2N2761 | 2N5416-220M

Keywords - BUV11N transistor datasheet

 BUV11N cross reference
 BUV11N equivalent finder
 BUV11N lookup
 BUV11N substitution
 BUV11N replacement

 

 
Back to Top

 


 
.