BUV21N Specs and Replacement

Type Designator: BUV21N

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 220 V

Maximum Collector-Emitter Voltage |Vce|: 180 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 40 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

 BUV21N Substitution

- BJT ⓘ Cross-Reference Search

 

BUV21N datasheet

 9.1. Size:139K  motorola

 buv21rev.pdf pdf_icon

BUV21N

Order this document MOTOROLA by BUV21/D SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series 40 AMPERES NPN Silicon Power Transistor NPN SILICON POWER . . . designed for high speed, high current, high power applications. METAL TRANSISTOR High DC current gain 200 VOLTS hFE min. = 20 at IC = 12 A 250 WATTS Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 A Very fast switching... See More ⇒

 9.2. Size:190K  onsemi

 buv21.pdf pdf_icon

BUV21N

BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. http //onsemi.com Features 40 AMPERES High DC Current Gain NPN SILICON POWER hFE min = 20 at IC = 12 A METAL TRANSISTOR Low VCE(sat), VCE(sat) 200 VOLTS - 250 WATTS max = 0.6 V at IC = 8 A Very Fast Switching Times NPN TF max = 0.4 ... See More ⇒

 9.3. Size:70K  onsemi

 buv21-d.pdf pdf_icon

BUV21N

BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. http //onsemi.com Features 40 AMPERES High DC Current Gain NPN SILICON POWER hFE min = 20 at IC = 12 A METAL TRANSISTOR Low VCE(sat), VCE(sat) 200 VOLTS - 250 WATTS max = 0.6 V at IC = 8 A Very Fast Switching Times TF max = 0.4 ms at... See More ⇒

 9.4. Size:117K  inchange semiconductor

 buv21.pdf pdf_icon

BUV21N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV21 DESCRIPTION With TO-3 package High DC current gain@IC=12A Fast switching times Low collector saturation voltage APPLICATIONS Designed for high current,high speed and high power applications. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) an... See More ⇒

SHOW MORE

Detailed specifications: BUV11N, BUV12, BUV18, BUV18X, BUV19, BUV1O, BUV20, BUV21, TIP127, BUV22, BUV23, BUV24, BUV25, BUV26, BUV26A, BUV26F, BUV26FI

Keywords - BUV21N pdf specs

 BUV21N cross reference

 BUV21N equivalent finder

 BUV21N pdf lookup

 BUV21N substitution

 BUV21N replacement