All Transistors. BUV21N Datasheet

 

BUV21N Datasheet and Replacement


   Type Designator: BUV21N
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 220 V
   Maximum Collector-Emitter Voltage |Vce|: 180 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 40 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

 BUV21N Substitution

   - BJT ⓘ Cross-Reference Search

   

BUV21N Datasheet (PDF)

 9.1. Size:139K  motorola
 buv21rev.pdf pdf_icon

BUV21N

Order this documentMOTOROLAby BUV21/DSEMICONDUCTOR TECHNICAL DATABUV21SWITCHMODE Series40 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high speed, high current, high power applications.METAL TRANSISTOR High DC current gain: 200 VOLTShFE min. = 20 at IC = 12 A 250 WATTS Low VCE(sat), VCE(sat) max. = 0.6 V at IC = 8 AVery fast switching

 9.2. Size:190K  onsemi
 buv21.pdf pdf_icon

BUV21N

BUV21SWITCHMODEt SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high powerapplications. http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 12 AMETAL TRANSISTOR Low VCE(sat), VCE(sat) 200 VOLTS - 250 WATTSmax = 0.6 V at IC = 8 A Very Fast Switching Times:NPNTF max = 0.4

 9.3. Size:70K  onsemi
 buv21-d.pdf pdf_icon

BUV21N

BUV21SWITCHMODEt SeriesNPN Silicon PowerTransistorThis device is designed for high speed, high current, high powerapplications. http://onsemi.comFeatures40 AMPERES High DC Current Gain:NPN SILICON POWERhFE min = 20 at IC = 12 AMETAL TRANSISTOR Low VCE(sat), VCE(sat) 200 VOLTS - 250 WATTSmax = 0.6 V at IC = 8 A Very Fast Switching Times:TF max = 0.4 ms at

 9.4. Size:117K  inchange semiconductor
 buv21.pdf pdf_icon

BUV21N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV21 DESCRIPTION With TO-3 package High DC current gain@IC=12A Fast switching times Low collector saturation voltage APPLICATIONS Designed for high current,high speed and high power applications. PINNING(see fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) an

SHOW MORE

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

Keywords - BUV21N transistor datasheet

 BUV21N cross reference
 BUV21N equivalent finder
 BUV21N lookup
 BUV21N substitution
 BUV21N replacement

 

 
Back to Top

 


 
.