All Transistors. BUV24 Datasheet

 

BUV24 Datasheet and Replacement


   Type Designator: BUV24
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 450 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
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BUV24 Datasheet (PDF)

 ..1. Size:208K  inchange semiconductor
 buv24.pdf pdf_icon

BUV24

isc Silicon NPN Power Transistor BUV24DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V (Max.)@I = 6ACE(sat) CHigh Power DissipationCollector-Emitter Sustaining Voltage-: V = 400V (Min.)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power switching applications in militaryand indus

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SD480 | 2N110 | 2SC806A | GET870 | 3DD5G | 2N5733 | DTL1642

Keywords - BUV24 transistor datasheet

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