BUV24 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUV24
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BUV24 Transistor Equivalent Substitute - Cross-Reference Search
BUV24 Datasheet (PDF)
..1. Size:208K inchange semiconductor
buv24.pdf
buv24.pdf
isc Silicon NPN Power Transistor BUV24DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V (Max.)@I = 6ACE(sat) CHigh Power DissipationCollector-Emitter Sustaining Voltage-: V = 400V (Min.)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power switching applications in militaryand indus
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
