All Transistors. BUV24 Datasheet

 

BUV24 Datasheet and Replacement


   Type Designator: BUV24
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 250 W
   Maximum Collector-Base Voltage |Vcb|: 450 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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BUV24 Datasheet (PDF)

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BUV24

isc Silicon NPN Power Transistor BUV24DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V (Max.)@I = 6ACE(sat) CHigh Power DissipationCollector-Emitter Sustaining Voltage-: V = 400V (Min.)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power switching applications in militaryand indus

Datasheet: BUV18X , BUV19 , BUV1O , BUV20 , BUV21 , BUV21N , BUV22 , BUV23 , 2SC2625 , BUV25 , BUV26 , BUV26A , BUV26F , BUV26FI , BUV27 , BUV27A , BUV27F .

History: AM80610-030 | 2N5615 | CSB834O | LBC557A | NPS3250A

Keywords - BUV24 transistor datasheet

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