BUV37 Specs and Replacement

Type Designator: BUV37

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 450 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TOP3

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BUV37 datasheet

 ..1. Size:251K  inchange semiconductor

 buv37.pdf pdf_icon

BUV37

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV37 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min.) Low Collector Saturation Voltage- VCE(sat)= 2.0V(Max.)@ IC= 10A APPLICATIONS Designed for use in automotive ignition circuits. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collecto... See More ⇒

Detailed specifications: BUV28FI, BUV296AV, BUV298AV, BUV298CV, BUV298V, BUV30, BUV36, BUV36A, BC549, BUV39, BUV40, BUV406, BUV41, BUV42, BUV42A, BUV46, BUV46A

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