All Transistors. BUV40 Datasheet

 

BUV40 Datasheet, Equivalent, Cross Reference Search

Type Designator: BUV40

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 120 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 125 V

Maximum Collector Current |Ic max|: 11 A

Max. Operating Junction Temperature (Tj): 200 °C

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO3

BUV40 Transistor Equivalent Substitute - Cross-Reference Search

 

BUV40 Datasheet (PDF)

1.1. buv40.pdf Size:204K _inchange_semiconductor

BUV40
BUV40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV40 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 5.5A ·High Switching Speed APPLICATIONS ·Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 250 V VBE=-1.

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 
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