All Transistors. BUV40 Datasheet

 

BUV40 Datasheet and Replacement


   Type Designator: BUV40
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Collector Current |Ic max|: 11 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3
 

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BUV40 Datasheet (PDF)

 ..1. Size:204K  inchange semiconductor
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BUV40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV40 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 5.5A High Switching Speed APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage 250 VVB

Datasheet: BUV298AV , BUV298CV , BUV298V , BUV30 , BUV36 , BUV36A , BUV37 , BUV39 , 2SC2240 , BUV406 , BUV41 , BUV42 , BUV42A , BUV46 , BUV46A , BUV46AFI , BUV46FI .

History: BCX5116TA | BCP5616QTC | ECG180 | BF760EA | MMBTSC3356S | 2SD863F | CSA1156

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