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BUV40 Specs and Replacement


   Type Designator: BUV40
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Collector Current |Ic max|: 11 A
   Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics


   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3
 

 BUV40 Substitution

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BUV40 datasheet

 ..1. Size:204K  inchange semiconductor
 buv40.pdf pdf_icon

BUV40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV40 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 0.8V (Max.) @IC= 5.5A High Switching Speed APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 250 V VB... See More ⇒

Detailed specifications: BUV298AV , BUV298CV , BUV298V , BUV30 , BUV36 , BUV36A , BUV37 , BUV39 , 2SA1015 , BUV406 , BUV41 , BUV42 , BUV42A , BUV46 , BUV46A , BUV46AFI , BUV46FI .

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