All Transistors. BUV40 Datasheet

 

BUV40 Datasheet and Replacement


   Type Designator: BUV40
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 250 V
   Maximum Collector-Emitter Voltage |Vce|: 125 V
   Maximum Collector Current |Ic max|: 11 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO3
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BUV40 Datasheet (PDF)

 ..1. Size:204K  inchange semiconductor
 buv40.pdf pdf_icon

BUV40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV40 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.8V (Max.) @IC= 5.5A High Switching Speed APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage 250 VVB

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FMMT723 | 2N3322 | 2N3296 | 2N60C | 2N3039 | TBC860 | BUX56

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