All Transistors. BUV42A Datasheet

 

BUV42A Datasheet and Replacement


   Type Designator: BUV42A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 120 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
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BUV42A Datasheet (PDF)

 ..1. Size:227K  inchange semiconductor
buv42a.pdf pdf_icon

BUV42A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV42A DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.9V(Max.) @IC= 4A High Switching Speed APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage 400 VVBE=

 9.1. Size:48K  st
buv42.pdf pdf_icon

BUV42A

BUV42SILICON NPN SWITCHING TRANSISTORn SGS-THOMSON PREFERRED SALESTYPEn FAST SWITCHING TIMESn LOW SWITCHING LOSSESn VERY LOW SATURATION VOLTAGE ANDHIGH GAIN FOR REDUCED LOADOPERATION12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-emitter Voltage (V = -1.5V) 350 VCEV BEV Collector-emitter Voltage (I = 0) 250 VCEO B

 9.2. Size:117K  inchange semiconductor
buv42.pdf pdf_icon

BUV42A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV42 DESCRIPTION With TO-3 package Fast switching times Low collector saturation voltage APPLICATIONS For switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings (Tc=25) SYMBOL PARAME

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: NJD2873T4G | FZT560 | ET5065 | AFY29 | CH867UPNGP | KT8150A-2 | ZTX107BK

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