BUV42A Datasheet, Equivalent, Cross Reference Search
Type Designator: BUV42A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BUV42A Transistor Equivalent Substitute - Cross-Reference Search
BUV42A Datasheet (PDF)
buv42a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV42A DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 0.9V(Max.) @IC= 4A High Switching Speed APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25) SYMBOL PARAMETER VALUE UNITVCEV Collector-Emitter Voltage 400 VVBE=
buv42.pdf
BUV42SILICON NPN SWITCHING TRANSISTORn SGS-THOMSON PREFERRED SALESTYPEn FAST SWITCHING TIMESn LOW SWITCHING LOSSESn VERY LOW SATURATION VOLTAGE ANDHIGH GAIN FOR REDUCED LOADOPERATION12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-emitter Voltage (V = -1.5V) 350 VCEV BEV Collector-emitter Voltage (I = 0) 250 VCEO B
buv42.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV42 DESCRIPTION With TO-3 package Fast switching times Low collector saturation voltage APPLICATIONS For switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings (Tc=25) SYMBOL PARAME
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
