BUV52 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUV52
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
BUV52 Transistor Equivalent Substitute - Cross-Reference Search
BUV52 Datasheet (PDF)
buv52.pdf
isc Silicon NPN Power Transistor BUV52DESCRIPTIONHigh Current CapabilityLow Collector Saturation Voltage-: V = 0.8V (Max.) @I = 4ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAME
buv52a.pdf
isc Silicon NPN Power Transistor BUV52ADESCRIPTIONHigh Current CapabilityLow Collector Saturation Voltage-: V = 0.9V (Max.) @I = 7ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAM
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
