BUV52 Specs and Replacement

Type Designator: BUV52

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 350 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

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BUV52 datasheet

 ..1. Size:205K  inchange semiconductor

 buv52.pdf pdf_icon

BUV52

isc Silicon NPN Power Transistor BUV52 DESCRIPTION High Current Capability Low Collector Saturation Voltage- V = 0.8V (Max.) @I = 4A CE(sat) C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAME... See More ⇒

 0.1. Size:203K  inchange semiconductor

 buv52a.pdf pdf_icon

BUV52

isc Silicon NPN Power Transistor BUV52A DESCRIPTION High Current Capability Low Collector Saturation Voltage- V = 0.9V (Max.) @I = 7A CE(sat) C High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed, high power applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAM... See More ⇒

Detailed specifications: BUV48C, BUV48CFI, BUV48CI, BUV48FI, BUV48I, BUV48T, BUV50, BUV51, C945, BUV52A, BUV54, BUV54A, BUV56, BUV56A, BUV60, BUV61, BUV62

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