BUV52 Datasheet and Replacement
Type Designator: BUV52
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 350 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
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BUV52 Datasheet (PDF)
buv52.pdf

isc Silicon NPN Power Transistor BUV52DESCRIPTIONHigh Current CapabilityLow Collector Saturation Voltage-: V = 0.8V (Max.) @I = 4ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAME
buv52a.pdf

isc Silicon NPN Power Transistor BUV52ADESCRIPTIONHigh Current CapabilityLow Collector Saturation Voltage-: V = 0.9V (Max.) @I = 7ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAM
Datasheet: BUV48C , BUV48CFI , BUV48CI , BUV48FI , BUV48I , BUV48T , BUV50 , BUV51 , 2N5401 , BUV52A , BUV54 , BUV54A , BUV56 , BUV56A , BUV60 , BUV61 , BUV62 .
History: KT8107D2 | 2SC3464L | BC329 | UN9217R | 2N1056 | 2SC999A | ECG2306
Keywords - BUV52 transistor datasheet
BUV52 cross reference
BUV52 equivalent finder
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History: KT8107D2 | 2SC3464L | BC329 | UN9217R | 2N1056 | 2SC999A | ECG2306



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