All Transistors. BUV52A Datasheet

 

BUV52A Datasheet and Replacement


   Type Designator: BUV52A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
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BUV52A Datasheet (PDF)

 ..1. Size:203K  inchange semiconductor
 buv52a.pdf pdf_icon

BUV52A

isc Silicon NPN Power Transistor BUV52ADESCRIPTIONHigh Current CapabilityLow Collector Saturation Voltage-: V = 0.9V (Max.) @I = 7ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAM

 9.1. Size:205K  inchange semiconductor
 buv52.pdf pdf_icon

BUV52A

isc Silicon NPN Power Transistor BUV52DESCRIPTIONHigh Current CapabilityLow Collector Saturation Voltage-: V = 0.8V (Max.) @I = 4ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAME

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: FMMT723 | 2N3322 | DRA3115T | 2SC507 | 2SA328 | KTA1050 | 2SB829R

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