All Transistors. BUV52A Datasheet

 

BUV52A Datasheet and Replacement


   Type Designator: BUV52A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3
 

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BUV52A Datasheet (PDF)

 ..1. Size:203K  inchange semiconductor
 buv52a.pdf pdf_icon

BUV52A

isc Silicon NPN Power Transistor BUV52ADESCRIPTIONHigh Current CapabilityLow Collector Saturation Voltage-: V = 0.9V (Max.) @I = 7ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAM

 9.1. Size:205K  inchange semiconductor
 buv52.pdf pdf_icon

BUV52A

isc Silicon NPN Power Transistor BUV52DESCRIPTIONHigh Current CapabilityLow Collector Saturation Voltage-: V = 0.8V (Max.) @I = 4ACE(sat) CHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current, high speed, high powerapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAME

Datasheet: BUV48CFI , BUV48CI , BUV48FI , BUV48I , BUV48T , BUV50 , BUV51 , BUV52 , 2N2222 , BUV54 , BUV54A , BUV56 , BUV56A , BUV60 , BUV61 , BUV62 , BUV62A .

History: SRC1206UF | 3DD301B | 2N5174 | E20180 | 2N5182 | 2SD1273O | MPS8099G

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