BUV60 Datasheet and Replacement
Type Designator: BUV60
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 125 V
Maximum Collector Current |Ic max|: 50 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO3
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BUV60 Datasheet (PDF)
buv60.pdf

BUV60SILICON NPN SWITCHING TRANSISTORn SGS-THOMSON PREFERRED SALESTYPEn FAST SWITCHING TIMESn LOW SWITCHING LOSSESn VERY LOW SATURATION VOLTAGE ANDHIGH GAIN FOR REDUCED LOADOPERATION12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Collector-emitter Voltage (V = -1.5V) 250 VCEV BEV Collector-emitter Voltage (I = 0) 125 VCEO B
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: D29E2 | BDS28A | KTB2510 | 2N1383V | 2SA3802 | 2SC2321 | DT3201
Keywords - BUV60 transistor datasheet
BUV60 cross reference
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History: D29E2 | BDS28A | KTB2510 | 2N1383V | 2SA3802 | 2SC2321 | DT3201



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