BUV60 Specs and Replacement

Type Designator: BUV60

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 250 V

Maximum Collector-Emitter Voltage |Vce|: 125 V

Maximum Collector Current |Ic max|: 50 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

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BUV60 datasheet

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BUV60

BUV60 SILICON NPN SWITCHING TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPE n FAST SWITCHING TIMES n LOW SWITCHING LOSSES n VERY LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERATION 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-emitter Voltage (V = -1.5V) 250 V CEV BE V Collector-emitter Voltage (I = 0) 125 V CEO B ... See More ⇒

Detailed specifications: BUV50, BUV51, BUV52, BUV52A, BUV54, BUV54A, BUV56, BUV56A, C5198, BUV61, BUV62, BUV62A, BUV63, BUV66, BUV66A, BUV70, BUV70F

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