BUV66 Specs and Replacement
Type Designator: BUV66
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 450 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO220
BUV66 Substitution
- BJT ⓘ Cross-Reference Search
BUV66 datasheet
isc Silicon NPN Power Transistor BUV66 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switch mode power supply, UPS, DC and AC motor control applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
Detailed specifications: BUV54A, BUV56, BUV56A, BUV60, BUV61, BUV62, BUV62A, BUV63, A1015, BUV66A, BUV70, BUV70F, BUV71, BUV71F, BUV74, BUV74A, BUV82
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