BUV70F Datasheet and Replacement
Type Designator: BUV70F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 140 W
Maximum Collector-Base Voltage |Vcb|: 1300 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 9 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: ISOTOP3
BUV70F Transistor Equivalent Substitute - Cross-Reference Search
BUV70F Datasheet (PDF)
buv70.pdf
isc Silicon NPN Power Transistor BUV70 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 600V (Min) (BR)CEO High Power Dissipation Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor controls, switching mode power supplies applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAME... See More ⇒
Datasheet: BUV60 , BUV61 , BUV62 , BUV62A , BUV63 , BUV66 , BUV66A , BUV70 , TIP3055 , BUV71 , BUV71F , BUV74 , BUV74A , BUV82 , BUV83 , BUV89 , BUV90 .
History: 2SD1607
Keywords - BUV70F transistor datasheet
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History: 2SD1607
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