BUV70F Datasheet and Replacement
Type Designator: BUV70F
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 140 W
Maximum Collector-Base Voltage |Vcb|: 1300 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 9 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: ISOTOP3
BUV70F Substitution
BUV70F Datasheet (PDF)
buv70.pdf

isc Silicon NPN Power Transistor BUV70DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 600V (Min)(BR)CEOHigh Power DissipationFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor controls, switching mode powersupplies applications.Absolute maximum ratings(Ta=25)SYMBOL PARAME
Datasheet: BUV60 , BUV61 , BUV62 , BUV62A , BUV63 , BUV66 , BUV66A , BUV70 , 13009 , BUV71 , BUV71F , BUV74 , BUV74A , BUV82 , BUV83 , BUV89 , BUV90 .
History: CHDTC144EKGP | BSP32 | ASY91 | ASY70 | DTA143TE | BDW23B | CHDTC144GEGP
Keywords - BUV70F transistor datasheet
BUV70F cross reference
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History: CHDTC144EKGP | BSP32 | ASY91 | ASY70 | DTA143TE | BDW23B | CHDTC144GEGP



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