BUV70F Datasheet. Specs and Replacement

Type Designator: BUV70F  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 140 W

Maximum Collector-Base Voltage |Vcb|: 1300 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 9 MHz

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: ISOTOP3

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BUV70F datasheet

 9.1. Size:218K  inchange semiconductor

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BUV70F

isc Silicon NPN Power Transistor BUV70 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 600V (Min) (BR)CEO High Power Dissipation Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor controls, switching mode power supplies applications. Absolute maximum ratings(Ta=25 ) SYMBOL PARAME... See More ⇒

Detailed specifications: BUV60, BUV61, BUV62, BUV62A, BUV63, BUV66, BUV66A, BUV70, TIP3055, BUV71, BUV71F, BUV74, BUV74A, BUV82, BUV83, BUV89, BUV90

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