BUV83 Specs and Replacement

Type Designator: BUV83

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 1000 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TOP3

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BUV83 datasheet

 ..1. Size:220K  inchange semiconductor

 buv82 buv83.pdf pdf_icon

BUV83

isc Silicon NPN Power Transistors BUV82/83 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min)-BUV82 CEO(SUS) = 450V(Min)-BUV83 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in converters, inverters, switching regula- tors, motor control systems and switching applications. A... See More ⇒

Detailed specifications: BUV66A, BUV70, BUV70F, BUV71, BUV71F, BUV74, BUV74A, BUV82, A1941, BUV89, BUV90, BUV90A, BUV90F, BUV93, BUV94, BUV95, BUV98

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