All Transistors. BUW17 Datasheet

 

BUW17 Datasheet and Replacement


   Type Designator: BUW17
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 450 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 5
   Noise Figure, dB: -
   Package: TO3
 

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BUW17 Datasheet (PDF)

 ..1. Size:206K  inchange semiconductor
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BUW17

isc Silicon NPN Power Transistor BUW17DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

Datasheet: BUW133 , BUW133A , BUW133H , BUW13A , BUW13AF , BUW13F , BUW14 , BUW16 , 8550 , BUW18 , BUW22 , BUW22A , BUW22AP , BUW22P , BUW23 , BUW24 , BUW25 .

History: KRC646T | 2SC3403 | 2N1532 | MJE13005G | PBSS4041PZ | 2SB430 | FJ0204-12

Keywords - BUW17 transistor datasheet

 BUW17 cross reference
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