BUW17 Specs and Replacement

Type Designator: BUW17

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 450 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: TO3

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BUW17 datasheet

 ..1. Size:206K  inchange semiconductor

 buw17.pdf pdf_icon

BUW17

isc Silicon NPN Power Transistor BUW17 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒

Detailed specifications: BUW133, BUW133A, BUW133H, BUW13A, BUW13AF, BUW13F, BUW14, BUW16, 2SC2655, BUW18, BUW22, BUW22A, BUW22AP, BUW22P, BUW23, BUW24, BUW25

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