BUW25-5 Specs and Replacement

Type Designator: BUW25-5

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

 BUW25-5 Substitution

- BJT ⓘ Cross-Reference Search

 

BUW25-5 datasheet

 9.1. Size:205K  inchange semiconductor

 buw25.pdf pdf_icon

BUW25-5

isc Silicon NPN Power Transistor BUW25 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min.) (BR)CEO High Speed Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec... See More ⇒

Detailed specifications: BUW18, BUW22, BUW22A, BUW22AP, BUW22P, BUW23, BUW24, BUW25, 2SD669A, BUW26, BUW28, BUW29, BUW32, BUW32A, BUW32AP, BUW32APFI, BUW32P

Keywords - BUW25-5 pdf specs

 BUW25-5 cross reference

 BUW25-5 equivalent finder

 BUW25-5 pdf lookup

 BUW25-5 substitution

 BUW25-5 replacement