BUW35 Specs and Replacement

Type Designator: BUW35

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 800 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

 BUW35 Substitution

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BUW35 datasheet

 ..1. Size:76K  jmnic

 buw35.pdf pdf_icon

BUW35

Product Specification www.jmnic.com Silicon NPN Power Transistors BUW35 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For high voltage ,fast switching applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALU... See More ⇒

 ..2. Size:204K  inchange semiconductor

 buw35.pdf pdf_icon

BUW35

isc Silicon NPN Power Transistor BUW35 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒

Detailed specifications: BUW29, BUW32, BUW32A, BUW32AP, BUW32APFI, BUW32P, BUW32PFI, BUW34, 2N2907, BUW36, BUW37, BUW38, BUW39, BUW40, BUW40A, BUW40B, BUW41

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