All Transistors. BUW35 Datasheet

 

BUW35 Datasheet and Replacement


   Type Designator: BUW35
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 800 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
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BUW35 Datasheet (PDF)

 ..1. Size:76K  jmnic
 buw35.pdf pdf_icon

BUW35

Product Specification www.jmnic.com Silicon NPN Power Transistors BUW35 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For high voltage ,fast switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALU

 ..2. Size:204K  inchange semiconductor
 buw35.pdf pdf_icon

BUW35

isc Silicon NPN Power Transistor BUW35DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N4955-78 | KSC5025R | ZTX3711L | 2SC482Y | 2SB67 | D60T6050 | RN4989

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