BUW35 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUW35
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BUW35 Transistor Equivalent Substitute - Cross-Reference Search
BUW35 Datasheet (PDF)
buw35.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors BUW35 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For high voltage ,fast switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALU
buw35.pdf
isc Silicon NPN Power Transistor BUW35DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SD557
