BUW35 Datasheet and Replacement
Type Designator: BUW35
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BUW35 Substitution
BUW35 Datasheet (PDF)
buw35.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors BUW35 DESCRIPTION With TO-3 package High breakdown voltage APPLICATIONS For high voltage ,fast switching applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALU
buw35.pdf

isc Silicon NPN Power Transistor BUW35DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag
Datasheet: BUW29 , BUW32 , BUW32A , BUW32AP , BUW32APFI , BUW32P , BUW32PFI , BUW34 , 2SC2482 , BUW36 , BUW37 , BUW38 , BUW39 , BUW40 , BUW40A , BUW40B , BUW41 .
History: BFQ39 | KT502V | CNL635 | DTC114YM3 | 2SA396
Keywords - BUW35 transistor datasheet
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History: BFQ39 | KT502V | CNL635 | DTC114YM3 | 2SA396



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