BUW36 Specs and Replacement

Type Designator: BUW36

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 125 W

Maximum Collector-Base Voltage |Vcb|: 900 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

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BUW36 datasheet

 ..1. Size:204K  inchange semiconductor

 buw36.pdf pdf_icon

BUW36

isc Silicon NPN Power Transistor BUW36 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, fast switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag... See More ⇒

Detailed specifications: BUW32, BUW32A, BUW32AP, BUW32APFI, BUW32P, BUW32PFI, BUW34, BUW35, MPSA42, BUW37, BUW38, BUW39, BUW40, BUW40A, BUW40B, BUW41, BUW41A

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