All Transistors. BUW36 Datasheet

 

BUW36 Datasheet and Replacement


   Type Designator: BUW36
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 125 W
   Maximum Collector-Base Voltage |Vcb|: 900 V
   Maximum Collector-Emitter Voltage |Vce|: 450 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
 

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BUW36 Datasheet (PDF)

 ..1. Size:204K  inchange semiconductor
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BUW36

isc Silicon NPN Power Transistor BUW36DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, fast switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

Datasheet: BUW32 , BUW32A , BUW32AP , BUW32APFI , BUW32P , BUW32PFI , BUW34 , BUW35 , 13001-A , BUW37 , BUW38 , BUW39 , BUW40 , BUW40A , BUW40B , BUW41 , BUW41A .

History: KSY34 | BFR44A | SMMBT2222AL | UNR111E | D60T4060 | MP4T3243 | DTA124TKA

Keywords - BUW36 transistor datasheet

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