BUW40A Datasheet, Equivalent, Cross Reference Search
Type Designator: BUW40A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 550 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO220
BUW40A Transistor Equivalent Substitute - Cross-Reference Search
BUW40A Datasheet (PDF)
buw40 buw40a buw40b.pdf
isc Silicon NPN Power Transistors BUW40/A/BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)- BUW40CEO(SUS)= 350V(Min)- BUW40A= 400V(Min)- BUW40BHigh Switching SpeedHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and switching applications.ABSOLUTE MAXIM
buw40 a b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW40/A/B DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- BUW40 = 350V(Min)- BUW40A = 400V(Min)- BUW40B High Switching Speed High Power Dissipation APPLICATIONSDesigned for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMB
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: BDT31AF