BUW45 Specs and Replacement
Type Designator: BUW45
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 175 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 7
Package: TO3
BUW45 Substitution
- BJT ⓘ Cross-Reference Search
BUW45 datasheet
isc Silicon NPN Power Transistor BUW45 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Intended in fast switching applications for high output powers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒
Detailed specifications: BUW41B, BUW42, BUW42A, BUW42AP, BUW42APFI, BUW42P, BUW42PFI, BUW44, TIP41C, BUW46, BUW48, BUW49, BUW50, BUW51, BUW52, BUW52I, BUW57
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