All Transistors. BUW51 Datasheet

 

BUW51 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUW51
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TOP3

 BUW51 Transistor Equivalent Substitute - Cross-Reference Search

   

BUW51 Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
 buw51.pdf

BUW51 BUW51

isc Silicon NPN Power Transistor BUW51DESCRIPTIONHigh Current CapabilityFast Switching SpeedLow Saturation Voltage and High GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifierapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SD469

 

 
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