All Transistors. BUW51 Datasheet

 

BUW51 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BUW51
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TOP3

 BUW51 Transistor Equivalent Substitute - Cross-Reference Search

   

BUW51 Datasheet (PDF)

 ..1. Size:214K  inchange semiconductor
buw51.pdf

BUW51 BUW51

isc Silicon NPN Power Transistor BUW51DESCRIPTIONHigh Current CapabilityFast Switching SpeedLow Saturation Voltage and High GainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifierapplications.Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITCollector-Emitter

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , C3198 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2N929 | 2SA2121 | 2SA1294Y | 2N5190 | KTB2510 | MJE5190J | MJE3521

 

 
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