BUW76 Specs and Replacement
Type Designator: BUW76
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 750 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO3
BUW76 Substitution
- BJT ⓘ Cross-Reference Search
BUW76 datasheet
isc Silicon NPN Power Transistor BUW76 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Intended in fast switching applications for high output powers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emi... See More ⇒
Detailed specifications: BUW66, BUW67, BUW70, BUW71, BUW72, BUW73, BUW74, BUW75, 2N2222A, BUW77, BUW81, BUW81A, BUW84, BUW85, BUW86, BUW87, BUW87A
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