BUX13CECC Specs and Replacement

Type Designator: BUX13CECC

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 150 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 325 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO3

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BUX13CECC datasheet

 9.1. Size:206K  inchange semiconductor

 bux13.pdf pdf_icon

BUX13CECC

isc Silicon NPN Power Transistor BUX13 DESCRIPTION Low Collector Saturation Voltage High Switching Speed High Current Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching circuits Motor control Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 400 V CBO C... See More ⇒

Detailed specifications: BUX11CECC, BUX11N, BUX11P, BUX12, BUX12A, BUX12CECC, BUX12P, BUX13, C3198, BUX14, BUX14CECC, BUX15, BUX15CECC, BUX16, BUX16A, BUX16B, BUX16C

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