All Transistors. BUX16B Datasheet

 

BUX16B Datasheet and Replacement


   Type Designator: BUX16B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 375 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 5 MHz
   Collector Capacitance (Cc): 150 pF
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO3
 

 BUX16B Substitution

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BUX16B Datasheet (PDF)

 ..1. Size:206K  inchange semiconductor
 bux16 bux16a bux16b bux16c.pdf pdf_icon

BUX16B

isc Silicon NPN Power Transistors BUX16/A/B/CDESCRIPTION Collector-Emitter Sustaining Voltage-: V = 200V(Min)- BUX16CEO(SUS)= 250V(Min)- BUX16A= 300V(Min)- BUX16B= 350V(Min)- BUX16CHigh Power DissipationWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in series regulators,

 9.1. Size:89K  inchange semiconductor
 bux16 a b c.pdf pdf_icon

BUX16B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX16/A/B/C DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min)- BUX16 = 250V(Min)- BUX16A = 300V(Min)- BUX16B = 350V(Min)- BUX16C High Power Dissipation Wide Area of Safe Operation APPLICATIONSDesigned for use in series regulators, power amplifiers, Inver

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N4941 | D33J21

Keywords - BUX16B transistor datasheet

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