BUX16B Specs and Replacement

Type Designator: BUX16B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 375 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Collector Capacitance (Cc): 150 pF

Forward Current Transfer Ratio (hFE), MIN: 12

Noise Figure, dB: -

Package: TO3

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BUX16B datasheet

 ..1. Size:206K  inchange semiconductor

 bux16 bux16a bux16b bux16c.pdf pdf_icon

BUX16B

isc Silicon NPN Power Transistors BUX16/A/B/C DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min)- BUX16 CEO(SUS) = 250V(Min)- BUX16A = 300V(Min)- BUX16B = 350V(Min)- BUX16C High Power Dissipation Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in series regulators,... See More ⇒

 9.1. Size:89K  inchange semiconductor

 bux16 a b c.pdf pdf_icon

BUX16B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX16/A/B/C DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 200V(Min)- BUX16 = 250V(Min)- BUX16A = 300V(Min)- BUX16B = 350V(Min)- BUX16C High Power Dissipation Wide Area of Safe Operation APPLICATIONS Designed for use in series regulators, power amplifiers, Inver... See More ⇒

Detailed specifications: BUX13, BUX13CECC, BUX14, BUX14CECC, BUX15, BUX15CECC, BUX16, BUX16A, 13005, BUX16C, BUX17, BUX17A, BUX17B, BUX17C, BUX18, BUX18B, BUX18C

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