BUX16C Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX16C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 425 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 5 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 12
Noise Figure, dB: -
Package: TO3
BUX16C Transistor Equivalent Substitute - Cross-Reference Search
BUX16C Datasheet (PDF)
bux16 bux16a bux16b bux16c.pdf
isc Silicon NPN Power Transistors BUX16/A/B/CDESCRIPTION Collector-Emitter Sustaining Voltage-: V = 200V(Min)- BUX16CEO(SUS)= 250V(Min)- BUX16A= 300V(Min)- BUX16B= 350V(Min)- BUX16CHigh Power DissipationWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in series regulators,
bux16 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX16/A/B/C DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min)- BUX16 = 250V(Min)- BUX16A = 300V(Min)- BUX16B = 350V(Min)- BUX16C High Power Dissipation Wide Area of Safe Operation APPLICATIONSDesigned for use in series regulators, power amplifiers, Inver
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
