BUX17B Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX17B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 2.5 MHz
Forward Current Transfer Ratio (hFE), MIN: 7
Noise Figure, dB: -
Package: TO3
BUX17B Transistor Equivalent Substitute - Cross-Reference Search
BUX17B Datasheet (PDF)
bux17 bux17a bux17b bux17c.pdf
isc Silicon NPN Power Transistors BUX17/A/B/CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 150V(Min)- BUX17CEO(SUS)= 250V(Min)- BUX17A= 300V(Min)- BUX17B= 350V(Min)- BUX17CHigh Switching SpeedHigh Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in off-line power supplies an
bux17 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX17/A/B/C DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 150V(Min)- BUX17 = 250V(Min)- BUX17A = 300V(Min)- BUX17B = 350V(Min)- BUX17C High Switching Speed High Power Dissipation APPLICATIONSDesigned for use in off-line power supplies and is also well suited fo
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
