BUX18B Specs and Replacement

Type Designator: BUX18B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO3

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BUX18B datasheet

 ..1. Size:206K  inchange semiconductor

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BUX18B

isc Silicon NPN Power Transistors BUX18/A/B/C DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min)- BUX18 CEO(SUS) = 325V(Min)- BUX18A = 375V(Min)- BUX18B = 425V(Min)- BUX18C High Switching Speed High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in off-line power supplies an... See More ⇒

Detailed specifications: BUX16A, BUX16B, BUX16C, BUX17, BUX17A, BUX17B, BUX17C, BUX18, 2SD669A, BUX18C, BUX20, BUX20A, BUX21, BUX22, BUX23, BUX24, BUX25

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