BUX21 Specs and Replacement
Type Designator: BUX21
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 250 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 40 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
BUX21 Substitution
- BJT ⓘ Cross-Reference Search
BUX21 datasheet
isc Silicon NPN Power Transistor BUX21 DESCRIPTION Low Collector Saturation Voltage- High Switching Speed High Current Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for use in switching and linear applications in military and industrial equipment. Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETE... See More ⇒
NPN BUX21A HIGH CURRENT, HIGH SPEED , HIGH POWER DISSIPATION HIGH CURRENT, HIGH SPEED , HIGH POWER DISSIPATION TRANSISTOR TRANSISTOR The BUX21A is silicon multiepitaxial planar NPN transistors in Jedec TO-3. They are intended for use in switching and linear appications in military and industrial equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Uni... See More ⇒
Detailed specifications: BUX17A, BUX17B, BUX17C, BUX18, BUX18B, BUX18C, BUX20, BUX20A, 2SA1015, BUX22, BUX23, BUX24, BUX25, BUX25-TO258, BUX26, BUX27, BUX28
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