BUX32A Specs and Replacement
Type Designator: BUX32A
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 450 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO3
BUX32A Substitution
- BJT ⓘ Cross-Reference Search
BUX32A datasheet
isc Silicon NPN Power Transistors BUX32/A/B DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 400V (Min)-BUX32 CEO(SUS) = 450V (Min)-BUX32A = 450V (Min)-BUX32B Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for off-line power supplies and are also well suited for u... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX32/A/B DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V (Min)-BUX32 = 450V (Min)-BUX32A = 450V (Min)-BUX32B Low Saturation Voltage APPLICATIONS Designed for off-line power supplies and are also well suited for use in a wide range of invert... See More ⇒
Detailed specifications: BUX30, BUX30AVA, BUX30AVB, BUX30AVC, BUX31, BUX31A, BUX31B, BUX32, D667, BUX32B, BUX33, BUX33A, BUX33B, BUX34, BUX348, BUX348A, BUX348APF
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