BUX67 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX67
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 175 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO66
BUX67 Transistor Equivalent Substitute - Cross-Reference Search
BUX67 Datasheet (PDF)
bux67 a b c.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX67/A/B/C DESCRIPTION Contunuous Collector Current-IC= 2A Power Dissipation-PD=35W @TC= 25 Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max)@ IC = 1A APPLICATIONSDesigned for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, s
bux67 bux67a bux67b bux67c.pdf
isc Silicon NPN Power Transistors BUX67/A/B/CDESCRIPTIONContunuous Collector Current-I = 2ACPower Dissipation-P =35W @T = 25D CCollector-Emitter Saturation Voltage-: V )= 2.5V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifier appli-cation f
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
