All Transistors. BUX67B Datasheet

 

BUX67B Datasheet and Replacement


   Type Designator: BUX67B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 35 W
   Maximum Collector-Base Voltage |Vcb|: 325 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 15 MHz
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO66
 

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BUX67B Datasheet (PDF)

 ..1. Size:207K  inchange semiconductor
 bux67 bux67a bux67b bux67c.pdf pdf_icon

BUX67B

isc Silicon NPN Power Transistors BUX67/A/B/CDESCRIPTIONContunuous Collector Current-I = 2ACPower Dissipation-P =35W @T = 25D CCollector-Emitter Saturation Voltage-: V )= 2.5V(Max)@ I = 1ACE(sat CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching and linear amplifier appli-cation f

 9.1. Size:158K  inchange semiconductor
 bux67 a b c.pdf pdf_icon

BUX67B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX67/A/B/C DESCRIPTION Contunuous Collector Current-IC= 2A Power Dissipation-PD=35W @TC= 25 Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max)@ IC = 1A APPLICATIONSDesigned for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, s

Datasheet: BUX64 , BUX65 , BUX66 , BUX66A , BUX66B , BUX66C , BUX67 , BUX67A , 2SD313 , BUX67C , BUX67D , BUX69 , BUX70 , BUX71 , BUX72 , BUX73 , BUX74 .

History: TD645 | MP26B | 2SC2577 | 2SC3254Q | 2SD523 | SF118 | BUX66B

Keywords - BUX67B transistor datasheet

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