BUX82-6 Datasheet, Equivalent, Cross Reference Search
Type Designator: BUX82-6
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
BUX82-6 Transistor Equivalent Substitute - Cross-Reference Search
BUX82-6 Datasheet (PDF)
bux82 83.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX82/83 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min)-BUX82 = 450V(Min)-BUX83 High Switching Speed APPLICATIONSDesigned for use as high-speed power switch at high voltage. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBUX82 800VCES Collec
bux82 bux83.pdf
isc Silicon NPN Power Transistors BUX82/83DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)-BUX82(BR)CEO= 450V(Min)-BUX83High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as high-speed power switch at highvoltage.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BCY69
