BUX83-9 Specs and Replacement

Type Designator: BUX83-9

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 900 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: TO3

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BUX83-9 datasheet

 9.1. Size:205K  inchange semiconductor

 bux82 bux83.pdf pdf_icon

BUX83-9

isc Silicon NPN Power Transistors BUX82/83 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min)-BUX82 (BR)CEO = 450V(Min)-BUX83 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as high-speed power switch at high voltage. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒

Detailed specifications: BUX81, BUX81-9, BUX82, BUX82-4, BUX82-5, BUX82-6, BUX82-7, BUX83, D882P, BUX84, BUX84-6, BUX84F, BUX85, BUX85F, BUX86, BUX86-4, BUX86-5

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