BUX83-9 Datasheet and Replacement
Type Designator: BUX83-9
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
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BUX83-9 Datasheet (PDF)
bux82 bux83.pdf

isc Silicon NPN Power Transistors BUX82/83DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)-BUX82(BR)CEO= 450V(Min)-BUX83High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as high-speed power switch at highvoltage.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: 2SA1051A | 2N5852 | 2SB464 | MMBT4122 | ZT1480 | 2SA843 | 2N1963
Keywords - BUX83-9 transistor datasheet
BUX83-9 cross reference
BUX83-9 equivalent finder
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History: 2SA1051A | 2N5852 | 2SB464 | MMBT4122 | ZT1480 | 2SA843 | 2N1963



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