BUX86 Specs and Replacement
Type Designator: BUX86
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Package: TO126
BUX86 Substitution
- BJT ⓘ Cross-Reference Search
BUX86 datasheet
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BUX 86P 87... See More ⇒
Detailed specifications: BUX82-7, BUX83, BUX83-9, BUX84, BUX84-6, BUX84F, BUX85, BUX85F, BD333, BUX86-4, BUX86-5, BUX86-6, BUX86-7, BUX86P, BUX87, BUX87-9, BUX87P
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