BUX86-5 Datasheet and Replacement
Type Designator: BUX86-5
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO126
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BUX86-5 Datasheet (PDF)
bux86p 87p 1.pdf

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTIONHigh voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use inconverters, inverters, switching regulators, motor control systems and switching applications.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITBUX 86P 87
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
History: FMMT723 | 2N3322 | UN2111 | 2N297 | DSC5A01 | C44VH10 | PDTC124XE
Keywords - BUX86-5 transistor datasheet
BUX86-5 cross reference
BUX86-5 equivalent finder
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History: FMMT723 | 2N3322 | UN2111 | 2N297 | DSC5A01 | C44VH10 | PDTC124XE



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