BUX86-5 Specs and Replacement
Type Designator: BUX86-5
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 350 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO126
BUX86-5 Substitution
BUX86-5 datasheet
bux86p 87p 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX86P BUX87P GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in converters, inverters, switching regulators, motor control systems and switching applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT BUX 86P 87... See More ⇒
Detailed specifications: BUX83-9 , BUX84 , BUX84-6 , BUX84F , BUX85 , BUX85F , BUX86 , BUX86-4 , BD222 , BUX86-6 , BUX86-7 , BUX86P , BUX87 , BUX87-9 , BUX87P , BUX88 , BUX90 .
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